MHV5IC1810NR2 View Datasheet(PDF) - Freescale Semiconductor

Part Name

Description

Manufacturer

MHV5IC1810NR2

RF LDMOS Wideband Integrated Power Amplifier

Freescale Semiconductor 

Table 1. Maximum Ratings

Rating

Drain - Source Voltage

Gate - Source Voltage

Storage Temperature Range

Operating Junction Temperature

Input Power

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Symbol

VDSS

VGS

Tstg

TJ

Pin

Symbol

RθJC

Value

- 0.5, +65

- 0.5, +12

- 65 to +150

150

12

Value (1)

Unit

Vdc

Vdc

°C

°C

dBm

Unit

°C/W

Final Application

Stage 1, 28 Vdc, IDQ1 = 120 mA

9.2

(Pout = 10 W CW)

Stage 2, 28 Vdc, IDQ2 = 90 mA

3.3

Driver Application

Stage 1, 28 Vdc, IDQ1 = 120 mA

10

(Pout = 2.25 W CW)

Stage 2, 28 Vdc, IDQ2 = 90 mA

3.5

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22 - A114)

0 (Minimum)

Machine Model (per EIA/JESD22 - A115)

A (Minimum)

Charge Device Model (per JESD22 - C101)

III (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

3

260

°C

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Wideband 1930 - 1990 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 120 mA, IDQ2 = 90 mA,

Pout = 5 W Avg., f1 = 1990 MHz, f2 = 1990.1 MHz, Two - Tone Test

Power Gain

Gps

26.5

29

—

dB

Power Added Efficiency

PAE

25

29

—

%

Intermodulation Distortion

IMD

—

- 34

- 27

dBc

Input Return Loss

IRL

—

- 10

dB

Typical Two - Tone Performances (In Freescale Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ1 = 120 mA, IDQ2 = 90 mA, Pout =

5 W Avg., 1805 - 1880 MHz

Power Gain

Gps

—

29

—

dB

Power Added Efficiency

PAE

—

29

—

%

Intermodulation Distortion

IMD

—

- 34

—

dBc

Input Return Loss

IRL

—

- 15

—

dB

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ1 = 105 mA, IDQ2 = 95 mA,

Pout = 3.2 W Avg., 1805 - 1880 MHz or 1930 - 1990 MHz EDGE Modulation

Power Gain

Gps

—

29

—

dB

Error Vector Magnitude

EVM

—

1.1

—

% rms

Spectral Regrowth at 400 kHz Offset

SR1

—

- 67

—

dBc

Spectral Regrowth at 600 kHz Offset

SR2

—

- 76

—

dBc

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MHV5IC1810NR2

2

RF Device Data

Freescale Semiconductor

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