MRFE6S9130HSR3(2007) View Datasheet(PDF) - Freescale Semiconductor

Part Name

Description

Manufacturer

MRFE6S9130HSR3
(Rev.:2007)

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor 

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22 - A114)

1A (Minimum)

Machine Model (per EIA/JESD22 - A115)

A (Minimum)

Charge Device Model (per JESD22 - C101)

IV (Minimum)

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 66 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

—

—

10

μAdc

IDSS

—

—

1

μAdc

IGSS

—

—

10

μAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 400 μAdc)

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 950 mAdc, Measured in Functional Test)

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 2.74 Adc)

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

VGS(th)

1

2.1

3

Vdc

VGS(Q)

2

2.9

4

Vdc

VDS(on)

—

0.22

0.5

Vdc

Crss

—

1.6

—

pF

Coss

—

66

—

pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N - CDMA, f = 880 MHz,

Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.

PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain

Gps

18

19.2

21

dB

Drain Efficiency

ηD

29

30.5

—

%

Adjacent Channel Power Ratio

ACPR

—

- 47.6

- 46

dBc

Input Return Loss

IRL

—

- 29

-9

dB

1. Part internally input matched.

MRFE6S9130HR3 MRFE6S9130HSR3

2

RF Device Data

Freescale Semiconductor

Share Link: