MT16LSDT6464A View Datasheet(PDF) - Micron Technology

Part Name

Description

Manufacturer

MT16LSDT6464A

SYNCHRONOUS DRAM MODULE

Micron Technology 

Diagram

32,64 Meg x 64 SDRAM DIMMs

SD8_16C32_64x64AG_C.fm - Rev. C 11/02

256MB / 512MB (x64)

168-PIN SDRAM DIMMs

Table 7: Burst Definitions

STARTING

BURST COLUMN

LENGTH ADDRESS

ORDER OF ACCESSES WITHIN

A BURST

2

4

8

Full

Page

(y)

TYPE =

TYPE =

SEQUENTIAL INTERLEAVED

A0

0

0-1

1

1-0

A1 A0

00

0-1-2-3

01

1-2-3-0

10

2-3-0-1

11

3-0-1-2

A2 A1 A0

0 0 0 0-1-2-3-4-5-6-7

0 0 1 1-2-3-4-5-6-7-0

0 1 0 2-3-4-5-6-7-0-1

0 1 1 3-4-5-6-7-0-1-2

1 0 0 4-5-6-7-0-1-2-3

1 0 1 5-6-7-0-1-2-3-4

1 1 0 6-7-0-1-2-3-4-5

1 1 1 7-0-1-2-3-4-5-6

n= A0-A11/9/8 Cn, Cn+1, Cn+2

(location Cn+3, Cn+4...

0 - y)

...Cn-1, Cn...

0-1

1-0

0-1-2-3

1-0-3-2

2-3-0-1

3-2-1-0

0-1-2-3-4-5-6-7

1-0-3-2-5-4-7-6

2-3-0-1-6-7-4-5

3-2-1-0-7-6-5-4

4-5-6-7-0-1-2-3

5-4-7-6-1-0-3-2

6-7-4-5-2-3-0-1

7-6-5-4-3-2-1-0

Not Supported

NOTE:

1. For full-page accesses: y = 1,024

2. For a burst length of two, A1–A9 select the block of

two burst; A0 selects the starting column within the

block.

3. For a burst length of four, A2–A9 select the block of

four burst; A0–A1 select the starting column within

the block.

4. For a burst length of eight, A3–A9 select the block

of eight burst; A0–A2 select the starting column

within the block.

5. For a full-page burst, the full row is selected and

A0–A9 select the starting column.

6. Whenever a boundary of the block is reached

within a given sequence above, the following

access wraps within the block.

7. For a burst length of one, A0–A9 select the unique

column to be accessed, and Mode Register bit M3 is

ignored. For a full-page burst, the full row is

selected and A0–A8 select the starting column.

9

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology Inc.

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