NDC7001 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

NDC7001

Dual N & P-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Typical Characteristics: N-Channel

1.5

VGS = 10V

1.2

8.0V

6.0V

0.9

5.0V

0.6

4.5V

4.0V

0.3

0

0

2

4

6

8

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

2

ID = 0.51A

1.8

VGS = 10V

1.6

1.4

1.2

1

0.8

0.6

0.4

-50 -25

0

25

50

75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

Figure 3. On-Resistance Variation

withTemperature.

1.5

VDS = 5V

1.2

TA =-55oC

25oC

125oC

0.9

0.6

0.3

0

1

3

5

7

9

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

2.4

2.2

VGS = 4.5V

2

1.8

5.0V

1.6

6.0V

1.4

7.0V

1.2

8.0V

10V

1

0.8

0

0.3

0.6

0.9

1.2

1.5

ID, DRAIN CURRENT (A)

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

6

ID = 0.26A

5

4

TA = 125oC

3

2

TA = 25oC

1

0

2

4

6

8

10

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

TA = 125oC

0.1

0.01

25oC

-55oC

0.001

0.0001

0.2

0.4

0.6

0.8

1

1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

NDC7001C Rev B (W)

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