NDC7001 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

NDC7001

Dual N & P-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Typical Characteristics: P-Channel

1

VGS = -10V

-6.0V

0.8

-4.5V

-4.0V

-3.5V

0.6

0.4

-3.0V

0.2

0

0

1

2

3

4

5

-VDS, DRAIN TO SOURCE VOLTAGE (V)

2.2

2

VGS= -3.0V

1.8

1.6

-3.5V

1.4

-4.0V

-4.5V

1.2

-6.0V

-10V

1

0.8

0

0.2

0.4

0.6

0.8

1

-ID, DRAIN CURRENT (A)

Figure 11. On-Region Characteristics.

Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8

ID = -0.34A

1.6 VGS = -10V

1.4

1.2

1

0.8

0.6

0.4

-50 -25

0

25

50

75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

5

ID = -0.17A

4

3

2

TA = 25oC

1

TA = 125oC

0

2

4

6

8

10

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 13. On-Resistance Variation

withTemperature.

Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.

1

VDS = -5V

0.8

0.6

TA = -55oC

25oC

125oC

0.4

0.2

0

1

2

3

4

5

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 15. Transfer Characteristics.

10

VGS = 0V

1

TA = 125oC

0.1

0.01

0.001

25oC

-55oC

0.0001

0.2

0.4

0.6

0.8

1

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 16. Body Diode Forward Voltage Variation

with Source Current and Temperature.

NDC7001C Rev B (W)

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