PHB129NQ04LT View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

PHB129NQ04LT

N-channel TrenchMOS™ logic level FET

Philips Electronics 

Philips Semiconductors

PHP/PHB129NQ04LT

N-channel TrenchMOS™ logic level FET

6. Characteristics

Table 5: Characteristics

Tj = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID = 250 µA; VGS = 0 V

Tj = 25 °C

Tj = −55 °C

40 -

-

V

36 -

-

V

VGS(th) gate-source threshold voltage

ID = 1 mA; VDS = VGS; Figure 9 and 10

Tj = 25 °C

Tj = 175 °C

Tj = −55 °C

1

1.5 2

V

0.5 -

-

V

-

-

2.2 V

IDSS

drain-source leakage current

IGSS

gate-source leakage current

VDS = 40 V; VGS = 0 V

Tj = 25 °C

Tj = 175 °C

VGS = ±15 V; VDS = 0 V

-

-

1

µA

-

-

500 µA

-

2

100 nA

RDSon drain-source on-state resistance

VGS = 10 V; ID = 25 A; Figure 7 and 8

Tj = 25 °C

Tj = 175 °C

VGS = 5 V; ID = 25 A; Figure 7 and 8

VGS = 4.5 V; ID = 25 A

-

4.1 5

mΩ

-

7.8 9.6 mΩ

-

5.7 6.4 mΩ

-

-

7.1 mΩ

Dynamic characteristics

Qg(tot) total gate charge

ID = 25 A; VDD = 32 V; VGS = 5 V; Figure 13 -

44.2 -

nC

Qgs

gate-source charge

-

10.9 -

nC

Qgd

gate-drain (Miller) charge

-

17.4 -

nC

Ciss

Coss

Crss

td(on)

tr

input capacitance

output capacitance

reverse transfer capacitance

turn-on delay time

rise time

VGS = 0 V; VDS = 25 V; f = 1 MHz;

Figure 11

VDD = 30 V; RL = 1.2 Ω;

VGS = 5 V; RG = 10 Ω

-

3965 -

pF

-

635 -

pF

-

280 -

pF

-

43 -

ns

-

145 -

ns

td(off)

turn-off delay time

-

132 -

ns

tf

fall time

-

92 -

ns

Source-drain diode

VSD

source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12

trr

reverse recovery time

Qr

recovered charge

IS = 20 A; dIS/dt = −100 A/µs;

VGS = 0 V; VR = 30 V

-

0.85 1.2 V

-

61 -

ns

-

57 -

nC

9397 750 13164

Product data

Rev. 01 — 11 May 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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