PHB129NQ04LT View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PHB129NQ04LT Datasheet PDF : 13 Pages
| |||
Philips Semiconductors
PHP/PHB129NQ04LT
N-channel TrenchMOS™ logic level FET
240
ID
(A)
Tj = 25 °C
160
03aq75
10 V 6 V 5 V 4.8 V
4.4 V
4V
80
ID VDS > ID x RDSon
(A)
60
03aq77
3.6 V
80
3.2 V
VGS = 2.8 V
0
0
0.5
1
1.5 VDS (V) 2
40
20
0
0
Tj = 175 °C
25 °C
1
2
3 VGS (V) 4
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 175 °C; VDS > ID x RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aq76
2
10
4.4 V
RDSon Tj = 25 °C
VGS = 4 V
a
(mΩ)
8
4.8 V
1.5
5V
6
6V
10 V
1
4
0.5
2
03aa27
0
0
80
160
240
ID (A)
0
-60
0
60
120 Tj (°C) 180
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 13164
Product data
Rev. 01 — 11 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6 of 13
Share Link: 