PHB129NQ04LT View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

PHB129NQ04LT

N-channel TrenchMOS™ logic level FET

Philips Electronics 

Philips Semiconductors

PHP/PHB129NQ04LT

N-channel TrenchMOS™ logic level FET

2.5

VGS(th)

(V)

2

1.5

1

03aa33

max

typ

min

10-1

ID

(A)

10-2

10-3

10-4

03aa36

min

typ

max

0.5

10-5

0

-60

0

60

120

180

Tj (°C)

10-6

0

1

2

3

VGS (V)

ID = 1 mA; VDS = VGS

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

Tj = 25 °C; VDS = 5 V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

104

03aq79

C

Ciss

(pF)

103

Coss

Crss

102

10-1

1

10 VDS (V) 102

VGS = 0 V; f = 1 MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

9397 750 13164

Product data

Rev. 01 — 11 May 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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