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PHB129NQ04LT View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
PHB129NQ04LT
Philips
Philips Electronics Philips
PHB129NQ04LT Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
PHP/PHB129NQ04LT
N-channel TrenchMOS™ logic level FET
80
IS VGS = 0 V
(A)
60
40
175 °C
20
03aq78
Tj = 25 °C
10
VGS
(V)
8
ID = 25 A
Tj = 25 °C
03aq80
6
14 V
VDD = 32 V
4
2
0
0
0.3
0.6
0.9
1.2
VSD (V)
0
0
25
50
75
100
QG (nC)
Tj = 25 °C and 175 °C; VGS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
ID = 25 A; VDD = 14 V and 32 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 13164
Product data
Rev. 01 — 11 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
8 of 13

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