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SI3208-X-GM View Datasheet(PDF) - Silicon Laboratories

Part Name
Description
Manufacturer
SI3208-X-GM
Silabs
Silicon Laboratories Silabs
SI3208-X-GM Datasheet PDF : 38 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Si3226/7
Si3208/9
Table 5. Linefeed Characteristics (Continued)
(VDD = 3.13 to 3.47 V, TA = 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade)
Parameter
Symbol
Test Condition
Min Typ Max
Loop Current
Sense Accuracy
Power Alarm
Threshold Accuracy
Accuracy of boundaries for
—
7
10
each output code;
ILOOP = 18 mA
Power Threshold = 300 mW
—
—
25
*Note: Ringing amplitude is set for 93 V peak and measured at TIP-RING using no series protection resistance.
Unit
%
%
Table 6. Monitor ADC Characteristics
(VDD = 3.13 to 3.47 V, TA = 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Differential Nonlinearity
(8-bit resolution)
Integral Nonlinearity
(8-bit resolution)
Gain Error
DNLE
INLE
—
—
1
LSB
—
—
1
LSB
—
—
5
%
Table 7. Si3208/Si3209 Characteristics
(VDD = 3.13 to 3.47 V, VBAT = –15 to –130 V, TA = 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade)
Parameter
Symbol
Test Condition
Min Typ Max Unit
TIP/RING Pull-down Transistor
VCM
Saturation Voltage
TIP/RING Pull-up Transistor
VOV
Saturation Voltage
OPEN State TIP/RING Leakage Current ILKG
VRING – VBAT (Forward)
VTIP – VBAT (Reverse)
VAC = 2.5 VPK
IOUT = 22 mA
IOUT = 60 mA
GND – VTIP (Forward)
GND – VRING (Reverse)
VAC = 2.5 VPK
IOUT = 22 mA
IOUT = 60 mA
RL = 0Ω
⎯ 3⎯V
⎯ ⎯ 3.5 V
⎯ 3⎯V
⎯ ⎯ 3.5 V
⎯ ⎯ 150 µA
Preliminary Rev. 0.33
9

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