RJP4009ANS View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

RJP4009ANS

Nch IGBT for Strobe Flash

Renesas Electronics 

RJP4009ANS

Application Example

VCM

Trigger Transformer

Xe Tube

CM +

–

8

7

6

5

1

2

3

4

Preliminary

VCM

ICP

CM

VGE

Maximum Operation

Conditions

IGBT driver

Precautions on Usage

1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the

device from electrostatic charge.

2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And

turn-off dv/dt must become less than 400 V/ μs. In general, when RG (off) = 30 Ω, it is satisfied.

3. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 150 A :

full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over

3 seconds.

R07DS0370EJ0200 Rev.2.00

Apr 27, 2011

Page 3 of 4

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