Si3038
Bill of Materials
Table 16. Global Component Values—Si3038 Chipset
Component1
Value
Supplier(s)
C1,C4
150 pF, 3 kV, X7R,±20%
Novacap, Venkel, Johanson, Murata, Panasonic
C2,C11,C23,C28,C29,C31,C32
Not Installed
C3
0.22 µF, 16 V, X7R,±20%
Novacap, Venkel, Johanson, Murata, Panasonic
C5
0.1 µF, 50 V, Elec/Tant, ±20%
C6,C10,C16
0.1 µF, 16 V, X7R, ±20%
C7,C8
560 pF, 250 V, X7R, ±20%
Novacap, Johanson, Murata, Panasonic
C9
10 nF, 250 V, X7R, ±20%
C12
0.22 µF, 16 V, Tant, ±20%
C13
0.47 µF, 16 V, X7R, ±20%
C14
0.68 µF, 16 V, X7R/Elec/Tant, ±20%
C18,C19
3.9 nF, 16 V, X7R, ±20%
C20
0.01 µF, 16 V, X7R, ±20%
C22
C24,C252
1800 pF, 50 V, X7R, ±20%
1000 pF, 3 kV, X7R, ±10%
C303
Not Installed
C34,C354
D1,D25
33 pF, 16 V, NPO, ±5%
Dual Diode, 300 V, 225 mA
Central Semiconductor
D3,D4
BAV99 Dual Diode, 70 V, 350 mW
Diodes Inc., OnSemiconductor, Fairchild
FB1,FB2
L1,L26
Ferrite Bead
330 mH, 120 mA, DCR <3 Ω, ±10%
Murata
Toko
Q1,Q3
A42, NPN, 300 V
OnSemiconductor, Fairchild
Q2
A92, PNP, 300 V
Q47
BCP56T1, NPN, 60 V, 1/2 W
OnSemiconductor, Fairchild
OnSemiconductor, Fairchild
RV1
RV28
Sidactor, 275 V, 100 A
Not Installed
Teccor, ST Microelectronics, Microsemi, TI
R1,R4,R21,R22,R23
Not Installed
R2
402 Ω, 1/16 W, ±1%
R3
Not Installed
R5
36 kΩ, 1/16 W, ±5%
R6
R7,R8,R15,R16,R17,R199
120 kΩ, 1/16 W, ±5%
4.87 kΩ, 1/4 W, ±1%
R9,R10
56 kΩ, 1/10 W, ±5%
R11
10 kΩ, 1/16 W, ±1%
R12
78.7 Ω, 1/16 W, ±1%
R13
215 Ω, 1/16 W, ±1%
R18
2.2 kΩ, 1/10 W, ±5%
R24
150 Ω, 1/16 W, ±5%
R27,R28
10 Ω, 1/10 W, ±5%
R29
Not Installed
R30
0 Ω, 1/10 W
U1
Si3024
Silicon Labs
U2
Si3014
Y14
24.576 MHz, 18 pF, 50 ppm
Silicon Labs
Z1
Zener Diode, 43 V, 1/2 W
Vishay, OnSemiconductor, Rohm
Z4,Z5
Zener Diode, 5.6 V, 1/2 W
Diodes Inc., OnSemiconductor, Fairchild
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
The following reference designators were intentionally omitted: C15, C17, C21, C26, C27, C31–C33, R14, and R20.
Y2 class capacitors are needed for the Nordic requirements of EN60950 and may also be used to achieve surge performance of 5 kV or better.
Install only if needed for improved radiated emissions performance (10 pF, 16 V, NPO, ±10%).
Y1, C34, and C35 should be installed if the Si3024 is configured as a primary device.
Several diode bridge configurations are acceptable (suppliers include General Semi., Diodes Inc.)
See Appendix B for additional considerations.
Q4 may require copper on board to meet 1/2 W power requirement. (Contact transistor manufacturer for details.)
RV2 can be installed to improve performance from 2500 V to 3500 V for multiple longitudinal surges (270 V, MOV).
The R7, R8, R15 and R16, R17, R19 resistors may each be replaced with a single resistor of 1.62 kΩ, 3/4 W, ±1%.
Rev. 2.01
17