SII150N06 View Datasheet(PDF) - Sirectifier Electronics

Part Name

Description

Manufacturer

SII150N06

NPT IGBT Modules

Sirectifier Electronics 

SII150N06

NPT IGBT Modules

Characteristics

Symbol

Conditions

IGBT Wechselrichter/ IGBT Inverter

VGEth

ICES

VGE = VCE, IC = 3.0mA

VGE = 0; VCE = 600V, Tj = 25(125)oC

IGES

VCE = 0; VGE=20V

VCE(sat) IC =150A; VGE = 15V; Tj = 25(125)oC

Cies under following conditions

Cres

VGE = 0, VCE = 25V, f = 1MHz

LCE

Isc

td(on)

tr

td(off)

tf

Eon(Eoff)

tP 10uS, VGE 15V, Tvj = 125 oC , Vcc = 360V

under following conditions:

VCC = 300V, IC = 150A

RGon = RGoff =1.5 , , Tj = 25(125)oC

VGE = ± 15V

Tj = 25(125)oC, LS = 15nH

RCC'+EE'

RthJC

Diode Wechselrichter/ Diode Inverter

VF

under following condition

IF = 150A; VGE = 0V; Tj = 25(125)oC

IRM

IF = 150A; Tj = 25(125)oC

Qr

-di/dt = 5600A/us

Erec

VGE = -10V, VR=300V

RthJC

RthCK

TVJ

TVJM

Tstg

Mechanical Data

Ms

to heatsink M6

Mt

to terminals M5

w

TC = 25oC, unless otherwise specified

min.

typ.

max.

Units

4.5

5.5

6.5

V

1(1000) 500

uA

400

nA

1.95(2.2) 2.45(-)

V

6.5

nF

0.6

40

nH

675

A

115(125)

ns

28(30)

ns

200(225)

ns

25(35)

ns

2.3(4.6)

mJ

1.0

m

0.21

K/W

1.25(1.2) 1.6(-)

V

180(215)

A

11(19)

uC

-(4.7)

mJ

0.4

0.02

K/W

-40...+125

150

oC

-40...+125

3

5

Nm

2.5

5

Nm

325

g

SirectifierR

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