SIR880DP View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SIR880DP Datasheet PDF : 13 Pages
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New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
VGS = 10 V thru 5 V
80
8
VGS = 4 V
60
6
SiR880DP
Vishay Siliconix
TC = 125 °C
40
20
0
0.0
0.010
VGS = 3 V
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.009
0.008
VGS = 4.5 V
0.007
0.006
VGS = 7.5 V
0.005
0.004
0
VGS = 10 V
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 20 A
8
VDS = 20 V
6
VDS = 40 V
4
VDS = 60 V
2
0
0
11
22
33
44
55
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 65702
S10-2683-Rev. B, 22-Nov-10
4
TC = 25 °C
2
TC = - 55 °C
0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
4500
Ciss
3600
2700
Coss
1800
900
Crss
0
0
16
32
48
64
80
VDS - Drain-to-Source Voltage (V)
Capacitance
2.1
ID = 20 A
1.8
1.5
VGS = 10 V
VGS = 4.5 V
1.2
0.9
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3
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