SIR880DP View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SIR880DP Datasheet PDF : 13 Pages
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New Product
SiR880DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.05
TJ = 150 °C
10
0.04
TJ = 25 °C
1
0.03
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.02
0.01
TJ = 125 °C
0.00
TJ = 25 °C
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
0.1
- 0.2
ID = 5 mA
- 0.5
ID = 250 µA
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
160
120
80
40
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
0.1
10 s
TA = 25 °C
Single Pulse
BVDSS Limited DC
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) isspecified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65702
S10-2683-Rev. B, 22-Nov-10
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