BDY27 View Datasheet(PDF) - Comset Semiconductors

Part Name

Description

Manufacturer

BDY27

NPN SILICON TRANSISTORS, DIFFUSED MESA

Comset Semiconductors 

COMSET

SEMICONDUCTORS

BDY26, 183 T2

BDY27, 184 T2

BDY28, 185 T2

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-C

Thermal Resistance, Junction to Case

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

Value

2

Unit

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

VCEO(BR)

ICEO

IEBO

Collector-Emitter

Breakdown Voltage (*)

IC=50 mA, IB=0

Collector-Emitter Cutoff

Current

VCE=180 V

VCE=200 V

VCE=250 V

Emitter-Base Cutoff Current VEB=10 V

BDY26, 183T2

180 -

BDY27, 184T2

200 -

BDY28A, 185T2A 250 -

BDY28B, 185T2B 250 -

BDY28C, 185T2C 220 -

BDY26

--

BDY27

--

BDY28

--

BDY26, 183T2

BDY27, 184T2

BDY28, 185T2

--

-

-

-

V

-

-

1.0 mA

1.0 mA

VCE=250 V

VBE=0 V

BDY26, 183T2

--

Collector-Emitter Cutoff

ICES

Current

VCE=300 V

VBE=0 V

BDY27, 184T2

- - 1.0 mA

VCE=400 V

VBE=0 V

BDY28, 185T2

--

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