WFSA6503 View Datasheet(PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
Part Name
Description
Manufacturer
WFSA6503 Datasheet PDF : 9 Pages
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WFSA6503
N- Channel and P-Channel Silicon MOSFETs
Features
■ Low On-resistance.
■ Composite type with an N-channel MOSFET and a
P-channel MOSFET driving from a 4.5V/-4.5V
supply voltage contained in a single package.
■ High-density mounting.
■ RoHS compliant.
SOP-8
Applications
■ General-Purpose Switching Device
■ For motor drives, inverters.
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Total Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Conditions
Ratings
Unit
N-Ch P-Ch
Drain-Source Voltage
30
-30
V
Gate-Source Voltage
±20
±20
V
Continuous Drain Current
6.9
-6
A
PW≤10uS, duty cycle≤1%
30
-30
A
Mounted on a ceramic board
W
1.3
1.3
(1000mm2×0.8mm) 1unit
Mounted on a ceramic board
W
1.7
1.7
(1000mm2×0.8mm)
Maximum
Junction
0C
150
Temperature
Storage Temperature Range
-55~+150
0C
Rev.A Feb.2012
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