GP50B60PD View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
GP50B60PD Datasheet PDF : 10 Pages
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IRGP50B60PD
600
TJ = 25°C
500
TJ = 125°C
400
300
200
TJ = 125°C
100
TJ = 25°C
0
0
5
10
15
20
VGE (V)
Fig. 7 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
25
20
15
ICE = 15A
ICE = 33A
10
ICE = 50A
5
0
0
5
10
15
20
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = 125°C
1800
1600
1400
EON
1200
1000
EOFF
800
600
400
200
10 20 30 40 50 60 70
IC (A)
Fig. 11 - Typ. Energy Loss vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
4
25
20
15
ICE = 15A
ICE = 33A
10
ICE = 50A
5
0
0
5
10
15
20
VGE (V)
Fig. 8 - Typical VCE vs. VGE
TJ = 25°C
100
TJ = 150°C
TJ = 125°C
T = 25°C
J
10
1
0.6
1.0
1.4
1.8
2.2
Forward Voltage Drop - V FM (V)
A
2.6
Fig. 10 - Maximum. Diode Forward
Characteristics tp = 80µs
1000
tdOFF
100
tF
tdON
tR
10
0
10 20 30 40 50 60 70
IC (A)
Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
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