GP50B60PD View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
GP50B60PD Datasheet PDF : 10 Pages
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IRGP50B60PD
1800
1600
1400
EOFF
1200
1000
800
EON
600
400
200
0
10
20
30
40
RG (Ω)
Fig. 13 - Typ. Energy Loss vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
35
30
25
20
15
10
5
1000
tdOFF
100
tF
tR
tdON
10
0
10
20
30
40
RG (Ω)
Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
10000
Cies
1000
Coes
100
Cres
0
0 100 200 300 400 500 600 700
Voltage (V)
Fig. 15- Typ. Output Capacitance
Stored Energy vs. VCE
10
0
100
200
300
400
500
VCE (V)
Fig. 16- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
16
14
VCE = 480V
12
10
8
6
4
2
0
0 50 100 150 200 250 300
Q G, Total Gate Charge (nC)
Fig. 17 - Typical Gate Charge vs. VGE
ICE = 33A
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1.5
1.3
1.0
0.8
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 18 - Normalized Typ. VCE(on)
vs. Junction Temperature
IC = 33A, VGE= 15V
5
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