BD226 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BD226 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN power transistors
Product specification
BD226; BD228; BD230
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BD226
BD228
BD230
collector-emitter voltage
BD226
BD228
BD230
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tmb ≤ 62 °C
MIN.
MAX.
UNIT
−
45
V
−
60
V
−
100
V
−
45
V
−
60
V
−
80
V
−
5
V
−
1.5
A
−
3
A
−
1
A
−
12.5
W
−65
+150
°C
−
150
°C
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-mb
thermal resistance from junction to ambient
note 1
thermal resistance from junction to mounting base
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
VALUE
100
7
UNIT
K/W
K/W
1997 Mar 06
3
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