2N7002P,215 View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

2N7002P,215

60 V, 360 mA N-channel Trench MOSFET

NXP Semiconductors. 

NXP Semiconductors

2N7002P

60 V, 0.3 A N-channel Trench MOSFET

5.0

VGS

(V)

4.0

017aaa025

3.0

2.0

1.0

0.0

0.0

0.2

0.4

0.6

QG (nC)

ID = 300 mA; VDD = 6 V; Tamb = 25 °C

Fig 14. Gate-source voltage as a function of gate

charge; typical values

1.2

IS

(A)

0.8

0.4

VDS

ID

VGS(pl)

VGS(th)

VGS

QGS1 QGS2

QGS

QGD

QG(tot)

003aaa508

Fig 15. Gate charge waveform definitions

017aaa026

(1)

(2)

0.0

0.0

0.4

0.8

1.2

VSD (V)

VGS = 0 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

Fig 16. Source current as a function of source-drain voltage; typical values

2N7002P_1

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 01 — 19 April 2010

© NXP B.V. 2010. All rights reserved.

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