PEMB18(2009) View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PEMB18 Datasheet PDF : 9 Pages
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NXP Semiconductors
PEMB18; PUMB18
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Per transistor
ICBO
collector-base cut-off VCB = −50 V; IE = 0 A
current
ICEO
collector-emitter cut-off VCE = −30 V; IB = 0 A
current
VCE = −30 V; IB = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off
VEB = −5 V; IC = 0 A
current
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = −5 V; IC = −10 mA
IC = −10 mA; IB = −0.5 mA
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = −5 V; IC = −100 µA
VCE = −0.3 V; IC = −20 mA
R2/R1 bias resistor ratio
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
−100 nA
-
-
−1 µA
-
-
−50 µA
-
-
−600 µA
50 -
-
-
-
−150 mV
-
−0.9 −0.3 V
−2.5 −1.5 -
V
3.3 4.7 6.1 kΩ
1.7 2.1 2.6
-
-
3
pF
PEMB18_PUMB18_4
Product data sheet
Rev. 04 — 1 September 2009
© NXP B.V. 2009. All rights reserved.
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