PUMB18(2009) View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PUMB18 Datasheet PDF : 9 Pages
| |||
NXP Semiconductors
PEMB18; PUMB18
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
103
hFE
102
10
006aaa202
(1)
(2)
(3)
−103
VCEsat
(mV)
−102
(1)
(2)
(3)
006aaa203
1
−10−1
−1
−10
−102
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
−10
VI(on)
(V)
−8
006aaa204
−6
−4
(1)
(2)
−2
(3)
0
−10−1
−1
−10
−102
IC (mA)
VCE = −0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
−10
−1
−10
−102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
−2.0
VI(off)
(V)
−1.6
006aaa205
−1.2
(1)
(2)
−0.8
(3)
−0.4
0
−10−2
−10−1
−1
−10
IC (mA)
VCE = −5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Off-state input voltage as a function of
collector current; typical values
PEMB18_PUMB18_4
Product data sheet
Rev. 04 — 1 September 2009
© NXP B.V. 2009. All rights reserved.
5 of 9
Share Link: 