PUMB1 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PUMB1 Datasheet PDF : 14 Pages
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NXP Semiconductors
PEMB1; PUMB1
PNP/PNP resistor-equipped transistors; R1 = 22 k
: , R2 = 22 k :
7. Characteristics
Table 8. Characteristics
Tamb = 25 qC unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor
ICBO
collector-base cut-off
VCB = 50 V; IE = 0 A
current
-
-
100 nA
ICEO
collector-emitter cut-off VCE = 30 V; IB = 0 A
current
VCE = 30 V; IB = 0 A;
Tj = 150 qC
IEBO
emitter-base cut-off
VEB = 5 V; IC = 0 A
current
-
-
100 nA
-
-
5 PA
-
-
180 PA
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
V CE = 5 V; IC = 5 mA
60
-
-
IC = 10 mA; IB = 0.5 mA -
-
150 mV
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
V CE = 5 V; IC = 100 PA
V CE = 0.3 V; IC = 5 mA
-
1.1 0.8 V
2.5
1.7 -
V
15.4 22 28.6 k :
R2/R1 bias resistor ratio
0.8 1
1.2
Cc
collector capacitance V CB = 10 V; IE = ie = 0 A;
-
-
3
pF
f = 1 MHz
fT
transition frequency
V CE = 5 V; IC = 10 mA; [1] -
180 -
MHz
f = 100 MHz
[1] Characteristics of built-in transistor
PEMB1_PUMB1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 28 November 2011
' NXP B.V. 2011. All rights reserved.
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