BTA204W-800F View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BTA204W-800F Datasheet PDF : 8 Pages
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NXP Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA204W series D, E and F
THERMAL RESISTANCES
SYMBOL
Rth j-sp
Rth j-a
PARAMETER
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:2
MIN.
-
-
-
TYP.
-
156
70
MAX. UNIT
15 K/W
- K/W
- K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BTA204W-
...D ...E ...F
IGT
Gate trigger current2
VTD 2=+1G2+V; IT = 0.1 A
-
-
5
10 25 mA
T2+ G-
-
-
5
10 25 mA
T2- G-
-
-
5
10 25 mA
IL
Latching current
VTD 2=+1G2+V; IGT = 0.1 A
-
-
6
12 20 mA
T2+ G-
-
-
9
18 30 mA
T2- G-
-
-
6
12 20 mA
IH
Holding current
VD = 12 V; IGT = 0.1 A
-
-
6
12 20 mA
VVTGT
ID
On-state voltage
Gate trigger voltage
Off-state leakage current
TVTIVVTjjDDD======21114V22A20D550RVM˚˚CCV(;mI;aTxI)T=; =00.1.1AA;
-
1.2
-
0.7
0.25 0.4
-
0.1
1.5
1.5
-
0.5
V
V
V
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BTA204W- ...D ...E ...F
dVD/dt
Critical rate of rise of
off-state voltage
TwVjDa=Mve=1f2o65r7m˚%C; ;gVeaDxtRepM(oomnpaxee);nntial 20
30 50
-
circuit
dIcom/dt
Critical rate of change of
commutating current
odIVTpV(DRMecMonSm=)/cd=4itr01c=0uA2iVt;0; VT/jµ=s;1g2a5te˚C;
1.0
2.0
2.5
-
dIcom/dt
Critical rate of change of
commutating current
odIVTpV(DRMecMonSm=)/cd=4itr01c=0uA0iVt;.;1TVj/=µs1;2g5at˚eC;
5.0
-
-
-
tgt
Gate controlled turn-on
time
IITGM==01.12
A;
A;
dVIDG/=dtV=DR5MA(m/aµx)s;
-
-
-
2
- V/µs
- A/ms
- A/ms
-
µs
2 Device does not trigger in the T2-, G+ quadrant.
December 1998
3
Rev 1.000
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