2SA1252 View Datasheet(PDF) - SANYO -> Panasonic
Part Name
Description
Manufacturer
2SA1252 Datasheet PDF : 4 Pages
| |||
Ordering number:EN1048B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1252/2SC3134
F for AF Applications
Features
· High VEBO.
· Wide ASO and high durability against breakdown.
Package Dimensions
unit:mm
2018A
[2SA1252/2SC3134]
( ) : 2SA1252
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE
fT
Cob
VCB=(–)40V, IE=0
VEB=(–)10V, IC=0
VCE=(–)6V, IC=(–)1mA
VCE=(–)6V, IC=(–)1mA
VCB=(–)6V, f=1MHz
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)50mA, IB=(–)5mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
* : The 2SA1252/2SC3134 are classified as follows according to hFE at 1mA :
90 4 180 135 5 270 200 6 400 300 7 600
Marking 2SA1252 : D
2SC3134 : H
hFE rank : 4, 5, 6, 7
C : Collector
B : Base
E : Emitter
SANYO : CP
Ratings
Unit
(–)60 V
(–)50 V
(–)15 V
(–)150 mA
(–)300 mA
200 mW
125 ˚C
–55 to +125 ˚C
Ratings
min
typ
90*
100
(3.5)
2.2
(–)60
(–)50
(–)15
max
(–)0.1
(–)0.1
560*
(–)0.5
Unit
µA
µA
MHz
pF
V
V
V
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3187AT/3155MW, TS No.1048-1/4
Share Link: 