2SK2980 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

2SK2980

Silicon N-Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK2980

Absolute Maximum Ratings

Item

Symbol

Ratings

Drain to source voltage

VDSS

30

Gate to source voltage

VGSS

+12

–10

Drain current

Drain peak current

Channel dissipation

ID

1.0

ID(pulse)Note1

4

Pch Note2

0.8

Channel temperature

Tch

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at when using alumina ceramic board (12.5 x 20 x 0.7 mm)

(Ta = 25°C)

Unit

V

V

V

A

A

W

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max Unit

Test Conditions

Drain to source breakdown voltage V(BR)DSS 30

Gate to source breakdown voltage V(BR)GSS +12

–10

Zero gate voltage drain current

IDSS

—

Gate to source leak current

IGSS

—

Gate to source cutoff voltage

VGS(off)

0.5

Static drain to source on state

resistance

RDS(on)

—

Static drain to source on state

resistance

RDS(on)

—

Forward transfer admittance

|yfs|

1.2

Input capacitance

Ciss

—

Output capacitance

Coss

—

—

—

—

—

—

—

—

1.0

—

±5.0

—

1.5

0.2

0.28

0.3

0.5

2.0

—

155

—

75

—

V ID = 100 µA, VGS = 0

V IG = +100 µA, VDS = 0

V IG = –100 µA, VDS = 0

µA VDS = 30 V, VGS = 0

µA VGS = ±8 V, VDS = 0

V ID = 10 µA, VDS = 5 V

Ω ID = 500 mA, VGS = 4 V Note3

Ω ID = 500 mA, VGS = 2.5 V Note3

S ID = 500 mA, VDS = 10 V Note3

pF VDS = 10 V, VGS = 0,

pF f = 1 MHz

Reverse transfer capacitance

Crss

—

35

—

pF

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Note: 3. Pulse test

td(on)

—

12

—

ns VGS = 4 V, ID = 500 mA,

tr

—

30

—

ns RL = 20 Ω

td(off)

—

35

—

ns

tf

—

30

—

ns

Rev.4.00 Sep 07, 2005 page 2 of 6

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