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2SK2980ZZ-TR-E View Datasheet(PDF) - Renesas Electronics

Part Name
Description
Manufacturer
2SK2980ZZ-TR-E
Renesas
Renesas Electronics Renesas
2SK2980ZZ-TR-E Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK2980
Main Characteristics
Power vs. Temperature Derating
1.6
Test condition :
When using alumina ceramic board
(12.5 x 20 x 0.7 mm)
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
1.0
4V
2.5 V
0.8
Pulse Test
2V
0.6
0.4
1.8 V
0.2
VGS = 1.5 V
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2
ID = 1 A
0.1
0.5 A
0.2 A
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Rev.4.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
30
10
10 µs 100 µs
3
1
PW 1 ms
0.3
0.1
0.03
OtlihmpisietearadretiboaynisRinDSD(oCnO) pe(r1a=tsio1hn0otm) s
0.01 Ta = 25°C
0.1 0.3 1 3
10 30 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
1.0
0.8
25°C
75°C
0.6
Tc = –25°C
0.4
0.2
VDS = 10 V
Pulse Test
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
2
Pulse Test
1
0.5
VGS = 2.5 V
0.2
4V
0.1
0.05
0.1 0.2
0.5 1
2
5
Drain Current ID (A)

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