RD15HVF1_11 View Datasheet(PDF) - MITSUBISHI ELECTRIC

Part Name

Description

Manufacturer

RD15HVF1_11

Silicon RF Power MOS FET (Discrete) RoHS Compliance, Silicon MOSFET Power Transistor

MITSUBISHI ELECTRIC  

< Silicon RF Power MOS FET (Discrete) >

RD15HVF1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W

ABSOLUTE MAXIMUM RATINGS

(Tc=25°C UNLESS OTHERWISE NOTED)

SYMBOL

PARAMETER

CONDITIONS

VDSS

Drain to source voltage

Vgs=0V

VGSS Gate to source voltage

Vds=0V

Pch

Channel dissipation

Tc=25°C

Pin

Input power

Zg=Zl=50

ID

Drain current

-

Tch

Channel temperature

-

Tstg

Storage temperature

-

Rth j-c Thermal resistance

junction to case

Note 1: Above parameters are guaranteed independently.

Note 2: Over 300MHz use spec is 6W

RATINGS

30

+/-20

48

1.5(Note2)

4

150

-40 to +150

2.6

UNIT

V

V

W

W

A

°C

°C

°C/W

ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED)

SYMBOL

PARAMETER

CONDITIONS

LIMITS

UNIT

MIN TYP MAX.

IDSS Zero gate voltage drain current VDS=17V, VGS=0V

-

- 100 uA

IGSS Gate to source leak current

VGS=10V, VDS=0V

-

-

1

uA

VTH Gate threshold Voltage

VDS=12V, IDS=1mA

1.5 2.0 2.5

V

Pout1 Output power

VDD=12.5V, Pin=0.6W,

15 18

-

W

D1 Drain efficiency

f=175MHz,Idq=0.5A

55 60

-

%

Pout2 Output power

VDD=12.5V, Pin=3W,

15 18

-

W

D2 Drain efficiency

f=520MHz,Idq=0.5A

50 55

-

%

Load VSWR tolerance

VDD=15.2V,Po=15W(PinControl)

No destroy

-

f=175MHz,Idq=0.5A,Zg=50

Load VSWR=20:1(All Phase)

Load VSWR tolerance

VDD=15.2V,Po=15W(PinControl)

No destroy

-

f=520MHz,Idq=0.5A,Zg=50

Load VSWR=20:1(All Phase)

Note : Above parameters , ratings , limits and conditions are subject to change.

Publication Date : Oct．2011

2

Share Link: