RD15HVF1_11 View Datasheet(PDF) - MITSUBISHI ELECTRIC
Part Name
Description
Manufacturer
RD15HVF1_11
MITSUBISHI ELECTRIC
RD15HVF1_11 Datasheet PDF : 10 Pages
| |||
< Silicon RF Power MOS FET (Discrete) >
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
100
80
60
40
20
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vgs-Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
6
4
2
0
0 2 4 6 8 10
Vgs(V)
Vds-Ids CHARACTERISTICS
10
Ta=+25°C
8
6
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
4
Vgs=4V
2
Vgs=3V
0
0 2 4 6 8 10
Vds(V)
Vds VS. Ciss CHARACTERISTICS
80
Ta=+25°C
f=1MHz
60
40
20
0
0
5
10
15
20
Vds(V)
Vds VS. Coss CHARACTERISTICS
100
80
Ta=+25°C
f=1MHz
60
40
20
0
0
5
10
15
20
Vds(V)
Vds VS. Crss CHARACTERISTICS
10
Ta=+25°C
f=1MHz
8
6
4
2
0
0
5
10
15
20
Vds(V)
Publication Date : Oct．2011
3
Share Link: