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Part Name
Description
BUZ93 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ93
SIPMOS® Power Transistor
Siemens AG
BUZ93 Datasheet PDF : 9 Pages
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2
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5
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7
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9
BUZ 93
Power dissipation
P
tot
=
Æ’
(
T
C
)
90
W
P
tot
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
T
C
Safe operating area
I
D
=
Æ’
(
V
DS
)
parameter:
D
= 0.01
, T
C
= 25°C
10
2
A
I
D
10
1
t
p
= 32.0µs
100 µs
Drain current
I
D
=
Æ’
(
T
C
)
parameter:
V
GS
≥
10 V
3.8
A
3.2
I
D
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0 20 40 60 80 100 120 °C 160
T
C
Transient thermal impedance
Z
th JC
=
Æ’
(
t
p
)
parameter:
D = t
p
/
T
10
1
K/W
10
0
Z
thJC
10
-1
10
0
10
-1
10
0
10
1
1 ms
10 ms
DC
10
2
V 10
3
V
DS
10
-2
10
-3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
t
p
Semiconductor Group
5
07/96
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