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Part Name
Description
BUZ93 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ93
SIPMOS® Power Transistor
Siemens AG
BUZ93 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
BUZ 93
Avalanche energy
E
AS
=
Æ’
(
T
j
)
parameter:
I
D
= 3.3 A,
V
DD
= 50 V
R
GS
= 25
Ω
,
L
= 37 mH
240
mJ
200
E
AS
180
160
140
120
100
80
60
40
20
0
20 40 60 80 100 120 °C 160
T
j
Drain-source breakdown voltage
V
(BR)DSS
=
Æ’
(
T
j
)
Typ. gate charge
V
GS
=
Æ’
(
Q
Gate
)
parameter:
I
D puls
= 5 A
16
V
V
GS
12
10
0,2
V
DS max
0,8
V
DS max
8
6
4
2
0
0 5 10 15 20 25 30 35 nC 45
Q
Gate
710
V
680
V
(BR)DSS
660
640
620
600
580
560
540
-60
-20
20
60
100 °C 160
T
j
Semiconductor Group
8
07/96
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