2SK2957L View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
2SK2957L Datasheet PDF : 8 Pages
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2SK2957(L), 2SK2957(S)
Static Drain to Source on State
Resistance vs. Temperature
20
Pulse Test
16
ID = 5, 10, 20 A
VGS = 4 V
12
8
10 V
4
5 ,10, 20 A
0
–40 0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
100
50
20
10
5
2
1
0.1 0.3
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
50
ID = 50 A
40
30 VDS
VGS
20
20
16
VDD = 5 V 12
10 V
25 V
8
10
VDD = 25 V
4
10 V
5V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
20
Tc = –25°C
10
25°C
5
75°C
2
1
0.5
0.1 0.2 0.5 1 2
VDS = 10 V
Pulse Test
5 10 20 50
Drain Current ID (A)
10000
Typical Capacitance
vs. Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
300
10
0
VGS = 0
f = 1 MHz
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
500
200
100
50
VGS = 10 V, VDD = 10 V
PW = 5 µs, duty < 1 %
td(off)
tf
tr
td(on)
20
10
0.1 0.2 0.5 1 2
5 10 20 50
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 4 of 7
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