2SK2929 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SK2929 Datasheet PDF : 10 Pages
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2SK2929
1000
500
Body–Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I DR (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
Ciss
500
200
Coss
100
50
Crss
20 VGS = 0
f = 1 MHz
10
0
10
20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
100
20
I D = 25 A
80
16
V DD = 50 V
25 V
60 VDS
10 V
12
VGS
40
8
20
V DD = 50 V
4
25 V
10 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
1000
Switching Characteristics
300
t d(off)
100
tf
30
tr
t d(on)
10
3
VGS = 10 V, V DD = 3 0 V
PW = 5 µs, duty < 1 %
1
0.1 0.3 1 3 10 30 100
Drain Current I D (A)
6
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