2SK2930 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
2SK2930 Datasheet PDF : 8 Pages
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2SK2930
Static Drain to Source on State
Resistance vs. Temperature
0.10
Pulse Test
0.08
0.06
0.04 VGS = 4 V
20 A
5,10 A
0.02
0
–40
10 V
0
40
5, 10,20 A
80 120 160
Case Temperature TC (°C)
1000
500
Body to Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
200
100
50
20
10
0.1 0.3 1 3
10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100
ID = 35 A
80
20
V DD = 50 V
25 V 16
10 V
60 VDS
12
VGS
40
8
20
VDD = 50 V
4
25 V
10 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
20
Tc = –25°C
25°C
10
75°C
5
2
1
0.5
0.1 0.3 1 3
VDS = 10 V
Pulse Test
10 30 100
Drain Current ID (A)
5000
Typical Capacitance
vs. Drain to Source Voltage
2000
1000
500
200
100
50
Ciss
Coss
Crss
20 VGS = 0
f = 1 MHz
10
0
10 20 30 40
50
Drain to Source Voltage VDS (V)
1000
300
100
30
Switching Characteristics
td(off)
tf
tr
10
td(on)
3
1
0.1 0.3
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
1 3 10 30 100
Drain Current ID (A)
Rev.5.00 Sep.07, 2005 page 4 of 7
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