SI4800 View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

SI4800

N-channel TrenchMOS logic level FET

Philips Electronics 

Philips Semiconductors

SI4800

N-channel TrenchMOS™ logic level FET

8

IS

(A)

6

4

2

003aaa329

Tj = 150 °C

25 °C

5

VGS

(V)

4

3

2

1

003aaa625

0

0.2

0.4

0.6

0.8

1

VSD (V)

0

0

5

10

15

QG (nC)

Tj = 25 °C and 150 °C; VGS = 0 V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

ID = 8 A; VDD = 15 V

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

9397 750 12899

Product data

Rev. 02 — 17 February 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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