A3V56S30FTP View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
A3V56S30FTP Datasheet PDF : 40 Pages
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A3V56S30FTP
A3V56S40FTP
256M Single Data Rate Synchronous DRAM
DC CHARACTERISTICS
(Recommended operating conditions unless otherwise noted, TA = 0 to 70°C)
Parameter
Symbol
Test Condition
Organization
Version
-6
-7
-75
Unit Note
Operating Current
(One Bank Active)
Burst length = 2
ICC1
tRC = tRC(min)
IO = 0 mA
X8
X 16
105 105 100
mA 1
110 110 105
Precharge Standby
Current in
power-down mode
Precharge Standby
Current
non power-down
mode
Active Standby
Current
power-down mode
(One Bank Active)
Active Standby
Current
non power-down
mode
(One Bank Active)
ICC2P CKE = VIL(max), tCC = 10ns
X 8 / X 16
ICC2PS
ICC2N
ICC2NS
ICC3P
CKE & CLK = VIL(max), tCC = ∞ X 8 / X 16
CKE = VIH(min), CS = VIH(min),
tCC = 10ns
Input signals are changed one
time during 20ns
CKE = VIH(min), CLK = VIL(max),
tCC = ∞
Input signals are stable
X 8 / X 16
X 8 / X 16
CKE = VIL(max), tCC = 10ns
X 8 / X 16
ICC3PS
ICC3N
ICC3NS
CKE & CLK = VIL(max), tCC = ∞ X 8 / X 16
CKE = VIH(min), CS = VIH(min),
tCC = 10ns
Input signals are changed one
time during 20ns
X 8 / X 16
CKE = VIH(min), CLK = VIL(max),
tCC = ∞
Input signals are stable
X 8 / X 16
12
mA
5
38
mA
28
35
mA
20
65
mA
45
Operating Current
(Burst Mode)
IO = 0 mA
ICC4
Page burst
4Banks Activated
tCCD = 2CLKs
X 8 / X 16
105 100 95 mA 1
Refresh Current
Self Refresh Current
ICC5
ICC6
tARFC = tARFC(min)
CKE = 0.2V
X 8 / X 16
X 8 / X 16
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
150 140 130 mA 2
6
6
6
mA
Revision 1.1
Page 6 / 39
Mar., 2010
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