IHW20N120R2 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

IHW20N120R2

Reverse Conducting IGBT with monolithic body diode

Infineon Technologies 

IHW20N120R2

Soft Switching Series

Reverse Conducting IGBT with monolithic body diode

Features:

• Powerful monolithic Body Diode with very low forward voltage

• Body diode clamps negative voltages

• Trench and Fieldstop technology for 1200 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

• NPT technology offers easy parallel switching capability due to

positive temperature coefficient in VCE(sat)

• Low EMI

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:

• Inductive Cooking

• Soft Switching Applications

C

G

E

PG-TO-247-3-21

Type

VCE

IC

VCE(sat),Tj=25°C

Tj,max

Marking

Package

IHW20N120R2

1200V 20A

1.55V

175°C H20R1202 PG-TO-247-3-21

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C)

Diode forward current

TC = 25°C

TC = 100°C

Diode pulsed current, tp limited by Tjmax

Diode surge non repetitive current, tp limited by Tjmax

TC = 25°C, tp = 10ms, sine halfwave

TC = 25°C, tp ≤ 2.5µs, sine halfwave

TC = 100°C, tp ≤ 2.5µs, sine halfwave

Gate-emitter voltage

Transient Gate-emitter voltage (tp < 5 ms)

Power dissipation TC = 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

VCE

IC

ICpuls

-

IF

IFpuls

IFSM

VGE

Ptot

Tj

Tstg

-

1200

V

A

40

20

60

60

40

20

30

50

130

120

±20

V

±25

330

W

-40...+175

°C

-55...+175

260

1 J-STD-020 and JESD-022

Power Semiconductors

1

Rev. 1.2 May 06

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