IHW20N120R2
Soft Switching Series
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
-
Output capacitance
Coss
VGE=0V,
-
Reverse transfer capacitance
Crss
f=1MHz
-
Gate charge
QGate
VCC=960V, IC=20A
-
VGE=15V
Internal emitter inductance
LE
-
measured 5mm (0.197 in.) from case
1887
59
47
143
13
- pF
-
-
- nC
- nH
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=600V,IC=20A
VGE=0 /15V,
RG=15Ω,
Lσ2)=180nH,
Cσ2)=39pF
min.
-
-
-
-
-
Value
typ.
Unit
Max.
359
- ns
53
-
-
-
1.2
-
1.2
- mJ
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(off)
tf
Eon
Eoff
Ets
Tj=175°C
VCC=600V,IC=20A,
VGE= 0 /15V,
RG= 15Ω,
Lσ=180nH2),
Cσ=39pF2)
min.
-
-
-
-
-
Value
Typ.
427
99
-
2.0
2.0
Unit
Max.
- ns
-
-
-
- mJ
2) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 1.2 May 06