IHW20N120R2 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

IHW20N120R2

Reverse Conducting IGBT with monolithic body diode

Infineon Technologies 

IHW20N120R2

Soft Switching Series

3.0mJ

Eoff

2.0mJ

1.0mJ

0.0mJ

0A

10A

20A

30A

IC, COLLECTOR CURRENT

Figure 13. Typical turn-off energy as a

function of collector current

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, RG=15Ω,

Dynamic test circuit in Figure E)

Eoff

2.0mJ

1.0mJ

0.0mJ

20Ω 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω

RG, GATE RESISTOR

Figure 14. Typical turn-off energy as a

function of gate resistor

(inductive load, TJ=175°C, VCE=600V,

VGE=0/15V, IC=20A,

Dynamic test circuit in Figure E)

2.0mJ

1.5mJ

Eoff

1.0mJ

0.5mJ

Eoff

1.5mJ

1.0mJ

0.5mJ

0.0mJ

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical turn-off energy as a

function of junction temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=20A, RG=15Ω,

Dynamic test circuit in Figure E)

0.0mJ

600V

700V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical turn-off energy as a

function of collector emitter

voltage

(inductive load, TJ=175°C,

VGE=0/15V, IC=20A, RG=15Ω,

Dynamic test circuit in Figure E)

Power Semiconductors

7

Rev. 1.2 May 06

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