IHW20N120R2 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

IHW20N120R2

Reverse Conducting IGBT with monolithic body diode

Infineon Technologies 

IHW20N120R2

Soft Switching Series

240V

10V

960V

5V

0V

0nC

50nC

100nC

150nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=20 A)

Ciss

1nF

100pF

Coss

Crss

10pF

0V

10V

20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

D=0.5

10-1K/W

10-2K/W

0.2

0.1

0.05

0.02

0.01

R,(K/W)

0.0578

0.1699

0.1392

0.087

τ, (s)

1.16*10-1

1.88*10-2

2.03*10-3

2.38*10-4

R1

R2

single pulse

C1=τ1/R1 C2=τ2/R2

10-3K/W

10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 19. IGBT transient thermal

resistance

(D = tp / T)

D=0.5

10-1K/W 0.2

0.1

0.05

R,(K/W)

0.0788

0.183

0.162

0.0505

τ, (s)

1.04*10-1

1.52*10-2

9.51*10-4

4.95*10-5

10-2K/W

0.02

0.01

single pulse

R1

R2

C1=τ1/R1 C2=τ2/R2

10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 20. Diode transient thermal

impedance as a function of pulse width

(D=tP/T)

Power Semiconductors

8

Rev. 1.2 May 06

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