50N33(2009) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
50N33 Datasheet PDF : 8 Pages
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FGPF50N33BT
330V, 50A PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.6V @ IC = 50A
• High input impedance
• Fast switching
Applications
• PDP System
April 2009
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
GC E
TO-220F
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICpulse (1)*
ICpulse (2)*
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Pulsed Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
2: Half Sine Wave, D < 0.01, pluse width < 10usec
*Ic_pluse limited by max Tj
©2009 Fairchild Semiconductor Corporation
1
FGPF50N33BT Rev. A
Ratings
330
± 30
50
120
160
43
17.2
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
oC
oC
oC
Typ.
-
-
Max.
2.9
62.5
Units
oC/W
oC/W
www.fairchildsemi.com
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