AT45D01SSHB1D--B View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

AT45D01SSHB1D--B

1-megabit 2.7-volt Minimum DataFlash®

Unspecified 

7.7 Chip Erase

The entire main memory can be erased at one time by using the Chip Erase command.

To execute the Chip Erase command, a 4-byte command sequence C7H, 94H, 80H and 9AH

must be clocked into the device. Since the entire memory array is to be erased, no address

bytes need to be clocked into the device, and any data clocked in after the opcode will be

ignored. After the last bit of the opcode sequence has been clocked in, the CS pin can be deas-

serted to start the erase process. The erase operation is internally self-timed and should take

place in a time of tCE. During this time, the Status Register will indicate that the device is busy.

The Chip Erase command will not affect sectors that are protected or locked down; the contents

of those sectors will remain unchanged. Only those sectors that are not protected or locked

down will be erased.

The WP pin can be asserted while the device is erasing, but protection will not be activated until

the internal erase cycle completes.

Table 7-3. Chip Erase Command

Command

Chip Erase

Byte 1

C7H

Byte 2

94H

Byte 3

80H

Byte 4

9AH

Figure 7-1. Chip Erase

CS

SI

Opcode

Byte 1

Each transition

represents 8 bits

Opcode

Byte 2

Opcode

Byte 3

Opcode

Byte 4

7.8 Main Memory Page Program Through Buffer

This operation is a combination of the Buffer Write and Buffer to Main Memory Page Program

with Built-in Erase operations. Data is first clocked into the buffer from the input pin (SI) and then

programmed into a specified page in the main memory. To perform a main memory page pro-

gram through buffer for the DataFlash standard page size (264-bytes), a 1-byte opcode, 82H,

must first be clocked into the device, followed by three address bytes. The address bytes are

comprised of six don’t care bits, nine page address bits, (PA8 - PA0) that select the page in the

main memory where data is to be written, and nine buffer address bits (BFA8 - BFA0) that select

the first byte in the buffer to be written. To perform a main memory page program through buffer

for the binary page size (256-bytes), the opcode 82H must be clocked into the device followed

by three address bytes consisting of seven don’t care bits, nine page address bits (A16 - A8)

that specify the page in the main memory to be written, and eight buffer address bits (BFA7 -

BFA0) that selects the first byte in the buffer to be written. After all address bytes are clocked in,

the part will take data from the input pins and store it in the specified data buffer. If the end of the

buffer is reached, the device will wrap around back to the beginning of the buffer. When there is

a low-to-high transition on the CS pin, the part will first erase the selected page in main memory

to all 1s and then program the data stored in the buffer into that memory page. Both the erase

and the programming of the page are internally self-timed and should take place in a maximum

time of tEP. During this time, the status register will indicate that the part is busy.

10 AT45DB011D

3639M–DFLASH–11/2017

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