5N3011 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
5N3011 Datasheet PDF : 7 Pages
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H5N3011P
Reverse Drain Current vs.
Source to Drain Voltage
100
80
60
40
10 V
20
5V
VGS = 0 V
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
VDS = 10 V
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 µ
100 µ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 0.833°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
10Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 150 V
Waveform
Vin 10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
Rev.2.00, Aug.05.2004, page 5 of 6
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