MT28F160A3 View Datasheet(PDF) - Micron Technology
Part Name
Description
Manufacturer
MT28F160A3 Datasheet PDF : 28 Pages
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ADVANCE
1 MEG x 16
ENHANCED BOOT BLOCK FLASH MEMORY
Figure 3
Automated Word Programming
Flowchart
Start
Issue WRITE SETUP
Command
Issue Word Address
and Word Data
Read Status Register
Bits
NO
SR7 = 1?
YES
Full Status Register
Check (optional)1
PROGRAM
SUSPEND Loop
NO
PROGRAM
SUSPEND?
YES
BUS
OPERATION COMMAND COMMENTS
WRITE
WRITE
SETUP
Data = 40h or 10h
Addr = Don’t Care
WRITE
WRITE
DATA
Data = Word to be
programmed
Addr = Address of word to be
programmed
READ
Status register data
Toggle OE# or CE# to
update status register.
Standby
Check SR7
1 = Ready, 0 = Busy
Repeat for subsequent words.
Write FFh after the last word programming operation
to reset the device to read array mode.
Word Program
Completed
FULL STATUS REGISTER CHECK FLOW
Read Status Register
Bits
SR1 = 0?
YES
NO PROGRAM Attempted
on a Locked Block
SR3 = 0?
NO
VPP Range Error
YES
SR4 = 0?
NO
Word Program Failed
YES
Word Program Passed
BUS
OPERATION
Standby
Standby
Standby
COMMAND
COMMENTS
Check SR1
1 = Detect locked block
Check SR32
1 = Detect VPP low
Check SR43
1 = Word program error
NOTE: 1. Full status register check can be done after each word or after a sequence of words.
2. SR3 must be cleared before attempting additional PROGRAM/ERASE operations.
3. SR4 is cleared only by the CLEAR STATUS REGISTER command, but it does not prevent additional program operation
attempts.
1 Meg x 16 Enhanced Boot Block Flash Memory
MT28F160A3_3.p65 – Rev. 3, Pub. 8/01
13
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
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