10BQ015M(2012) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
10BQ015M Datasheet PDF : 6 Pages
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www.vishay.com
VS-10BQ015-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
VF(TO)
rt
CT
LS
dV/dt
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
1A
2A
1A
2A
TJ = 25 °C
TJ = 100 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.33
0.39
0.21
0.29
0.5
35
-
-
390
2.0
10 000
UNITS
V
mA
V
m
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ (1)
Maximum storage temperature range
Maximum thermal resistance,
junction to lead
TStg
RthJL (2)
DC operation
See fig. 4
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
Approximate weight
Marking device
Case style SMB (similar to DO-214AA)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB
VALUES
- 55 to 125
- 55 to 150
UNITS
°C
36
°C/W
80
0.10
g
0.003
oz.
1C
Revision: 29-May-12
2
Document Number: 93349
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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