123NQ100PBF View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
123NQ100PBF Datasheet PDF : 6 Pages
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123NQ100PbF
Vishay High Power Products Schottky Rectifier, 120 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width = 500 µs
IRM
CT
LS
dV/dt
TEST CONDITIONS
120 A
240 A
TJ = 25 °C
120 A
240 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
From top of terminal hole to mounting plane
Rated VR
VALUES
0.91
1.26
0.73
0.9
3
40
2650
7.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Terminal torque
Case style
minimum
maximum
minimum
maximum
Non-lubricated threads
VALUES
- 55 to 175
UNITS
°C
0.38
°C/W
0.05
30
g
1.06
oz.
3 (26.5)
4 (35.4)
3.4 (30)
N⋅m
(lbf ⋅ in)
5 (44.2)
HALF-PAK module
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94129
Revision: 28-Apr-08
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