DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

RMBA19500A-58 View Datasheet(PDF) - Raytheon Company

Part Name
Description
Manufacturer
RMBA19500A-58
Raytheon
Raytheon Company Raytheon
RMBA19500A-58 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
RMBA19500A-58
PCS1900 2 Watt GaAs MMIC
Power Amplifier
ADVANCED INFORMATION
Description
The RMBA19500A-58 is a high power, highly linear Power Amplifier. The circuit uses Raytheon’s pHEMT process.
It has been designed for use as a driver stage for PCS1900 base stations, or as the output stage for Micro- and
Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for PCS operation. The
device is matched for 50 ohms input impedance.
Features
2 Watt linear output power at 38 dBc ACPR1 for CDMA operation
OIP3 43 dBm at 27 and 30 dBm output
Small Signal Gain of 28 dB
Small outline SMD package
Absolute
Maximum
Ratings
Parameter
Drain Supply Voltage1
Gate Supply Voltage (max absolute value)
RF Input Power (from 50source)
Operating Case Temperature Range
Storage Temperature Range
Symbol
Vd
Vg
Pin
Tc
Tstg
Value
+10
-5
+5
-30 to +85
-40 to +100
Unit
Volts
Volts
dBm
°C
°C
Electrical
Characteristics2
Parameter
Frequency Range
Gain (small signal)
Over 1930-1990 MHz
Gain variation:
Over frequency range
Over temperature range
Noise Figure
P1dB Output
Output Power @ CDMA3
Min
1930
28
28
33
Typ
30
+/- 1.0
+/- 1.5
6
30
Max Unit
1990 MHz
dB
dB
dB
dB
dBm
dBm
Parameter
PAE (At P1dB
output power4)
OIP35
Drain Voltage (Vd)
Gate Voltages6
Quiescent current
(Idq1,2, 3)6
Thermal Resistance
(Channel to Case)
Min Typ Max Unit
22
%
43 45
dBm
7.0
Volts
-1.5
-0.5 Volts
185
445
mA
Rjc 11
°C/W
www.raytheonrf.com
Notes:
1. Only under quiescent conditions - no RF applied.
2. 50 ohm system, Vd = 7.0V, Tc = 25°C.
3. 9 channel forward line QPSK source; 1.23 Mbps modulation rate. ACPR1 measured at 885 KHz offset at a value of 38 dBc. CDMA
waveform measured using the ratio of the average power within the 1.23 MHz channel and within a 30 KHz bandwidth at an 885 KHz offset.
4. Single tone at Bandcenter.
5. Ultra-linear OIP3 specifications are achieved for output power levels of 27 and 30 dBm per tone.
6. Quiescent currents can be adjusted to optimize the linearity of the amplifier for differing operation. Default biasing is optimized for PCS .
Gate voltages are to be adjusted to achieve these quiescent currents.
Characteristic performance data and specifications are subject to change without notice.
Revised November 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]