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Part Name
Description
1SS110 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
1SS110
Silicon Epitaxial Planar Diode for Tuner Band Switch
Hitachi -> Renesas Electronics
1SS110 Datasheet PDF : 5 Pages
1
2
3
4
5
1SS110
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Reverse voltage
Forward current
Junction temperature
Storage temperature
Symbol
V
R
I
F
Tj
Tstg
Value
Unit
35
V
100
mA
175
°
C
–65 to +175
°
C
Electrical Characteristics
(Ta = 25
°
C)
Item
Forward voltage
Reverse voltage
Reverse current
Capacitance
Forward resistance
Symbol Min Typ Max Unit Test Condition
V
F
—
—
1.0
V
I
F
= 10mA
V
R
35
—
—
V
I
R
= 10
µ
A
I
R
—
—
0.1
µ
A
V
R
= 25V
C
—
—
1.2
pF
V
R
= 6V, f = 1MHz
r
f
—
—
0.9
Ω
I
F
= 2mA, f = 100MHz
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