1SS355VM View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

Manufacturer

1SS355VM

Switching Diode

ROHM Semiconductor 

Data Sheet

Switching Diode

1SS355VM

lApplications

High frequency switching

lDimensions (Unit : mm)

1.25±0.1

0.1±0.1

　　　 0.05

lLand size figure (Unit : mm)

0.9MIN.

lFeatures

1)Ultra small mold type.（UMD2）

2)High reliability

lConstruction

Silicon epitaxial planer

UMD2

0.3±0.05

ROHM : UMD2

JEDEC : SOD-323

JEITA : SC-90/A

dot (year week factory)

0.7±0.2

　　　 0.1

lStructure

lTaping dimensions (Unit : mm)

4.0±0.1 2.0±0.05

φ 1.55±0.05

0.3±0.1

lAbsolute maximum ratings (Ta=25C)

Parameter

Symbol

Reverse voltage (repetitive peak) VRM

Reverse voltage (DC)

VR

Forward current

IFM

average rectified forward current

Io

Surge current (t=1s)

Junction temperature

Isurge

Tj

Storage temperature

Tstg

1.40±0.1

4.0±0.1

φ 1.05

Limits

Unit

90

V

80

V

225

mA

100

mA

500

mA

150

C

-55 to +150

C

1.0±0.1

lElectrical characteristics (Tj=25C)

Parameter

Symbol Min.

Typ.

Max.

Forward voltage

Reverse current

VF

-

IR

-

-

1.2

-

0.1

Capacitance between terminals

Ct

-

-

3

Reverse recovery time

trr

-

-

4

Unit

Conditions

V

IF=100mA

μA

VR=80V

pF

VR=0.5V , f=1MHz

ns

VR=6V , IF=10mA , RL=100Ω

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2011.12 - Rev.A

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